Semiconductor Electrochemistry - Thin Films and Passivation

Tuesday, 26 May 2015: 10:00-14:30
Conference Room 4F (Hilton Chicago)
Chairs:
Heli Wang and Philippe M. Vereecken
10:00
Chemical Nature and Control of High-k Dielectric/III-V Interfaces
W. J. Cabrera (University of Texas at Dallas), M. D. Halls (Schr÷dinger Inc, Schrodinger Inc.), and Y. J. Chabal (University of Texas at Dallas)
10:40
11:20
(Invited) Stabilizing Semiconductor-Solution Interfaces Via Chemically Stable but Electronically Defective Coatings
S. Hu, M. Shaner, M. F. Lichterman (Joint Center for Artificial Photosynthesis, California Institute of Technology), M. H. Richter (Joint Center for Artificial Photosynthesis), E. Verlage (California Institute of Technology, Joint Center for Artificial Photosynthesis), T. Mayer (Darmstadt University of Technology, Germany), B. Brunschwig (California Institute of Technology), P. D. Dapkus (University of Southern California), and N. S. Lewis (Joint Center for Artificial Photosynthesis, California Institute of Technology)
12:00
Photoelectrochemical Studies and Capacitance Measurements during the Nitride Passivation of InP in Liquid Ammonia (-55°C)
C. Njel (Institut lavoisier de Versailles, UVSQ), I. Bakas (Institut Lavoisier de Versailles, UVSQ), D. Aureau (Institut Lavoisier de Versailles), A. M. Gonšalves, and A. Etcheberry (Institut Lavoisier de Versailles, UVSQ)
12:20
 An Attractive Wet Route for Nitriding III-Vs
C. Njel (Institut lavoisier de Versailles, UVSQ), D. Aureau (Institut Lavoisier de Versailles), A. M. Gonšalves, and A. Etcheberry (Institut Lavoisier de Versailles, UVSQ)
12:40
Photoelectrochemical Properties of InGaN Thin Film Grown By Plasma Assisted Molecular Beam Epitaxy
Y. M. Shen, A. Ganguly (Institute of Atomic and Molecular Sciences), L. C. Chen (Center for Condensed Matter Sciences, Natl Taiwan Univ, Institute of Atomic and Molecular Sciences), and K. H. Chen (Institute of Atomic and Molecular Sciences)
13:00
Intermission