Semiconductor Electrochemistry - Thin Films and Passivation

Tuesday, 26 May 2015: 10:00-14:30
Conference Room 4F (Hilton Chicago)
Chairs:
Heli Wang and Philippe M. Vereecken
10:00
1293
Chemical Nature and Control of High-k Dielectric/III-V Interfaces
W. J. Cabrera (University of Texas at Dallas), M. D. Halls (Schrödinger Inc, Schrodinger Inc.), and Y. J. Chabal (University of Texas at Dallas)
10:40
1294
(Invited) Chemical Stability and Electronic Behavior of Atomic Layer Deposited Metal Oxide Thin Films
N. C. Strandwitz, B. Bao, and G. C. Correa (Lehigh University)
11:20
1295
(Invited) Stabilizing Semiconductor-Solution Interfaces Via Chemically Stable but Electronically Defective Coatings
S. Hu, M. Shaner, M. F. Lichterman (Joint Center for Artificial Photosynthesis, California Institute of Technology), M. H. Richter (Joint Center for Artificial Photosynthesis), E. Verlage (California Institute of Technology, Joint Center for Artificial Photosynthesis), T. Mayer (Darmstadt University of Technology, Germany), B. Brunschwig (California Institute of Technology), P. D. Dapkus (University of Southern California), and N. S. Lewis (Joint Center for Artificial Photosynthesis, California Institute of Technology)
12:00
1296
Photoelectrochemical Studies and Capacitance Measurements during the Nitride Passivation of InP in Liquid Ammonia (-55°C)
C. Njel (Institut lavoisier de Versailles, UVSQ), I. Bakas (Institut Lavoisier de Versailles, UVSQ), D. Aureau (Institut Lavoisier de Versailles), A. M. Gonçalves, and A. Etcheberry (Institut Lavoisier de Versailles, UVSQ)
12:20
1297
 An Attractive Wet Route for Nitriding III-Vs
C. Njel (Institut lavoisier de Versailles, UVSQ), D. Aureau (Institut Lavoisier de Versailles), A. M. Gonçalves, and A. Etcheberry (Institut Lavoisier de Versailles, UVSQ)
12:40
1298
Photoelectrochemical Properties of InGaN Thin Film Grown By Plasma Assisted Molecular Beam Epitaxy
Y. M. Shen, A. Ganguly (Institute of Atomic and Molecular Sciences), L. C. Chen (Center for Condensed Matter Sciences, Natl Taiwan Univ, Institute of Atomic and Molecular Sciences), and K. H. Chen (Institute of Atomic and Molecular Sciences)
13:00
Intermission
See more of: G02: Processes at the Semiconductor Solution Interface 6
See more of: Electronic Materials and Processing
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