Highly Confined Electronic and Ionic Conduction in Oxide Heterostructures

Wednesday, October 14, 2015: 09:00
Remington B (Hyatt Regency)
N. Pryds (DTU)
The conductance confined at the interface of complex oxide heterostructures provides new opportunities to explore nanoelectronic as well as nanoionic devices. In this talk I will present our recent results both on ionic and electronic conductivity at different heterostructures systems.

In the first part of my talk I will show some of our resent results that we demonstrated the possibility of stabilizing δ-Bi2O3 using highly coherent interfaces of alternating layers. Remarkably, an exceptionally high chemical stability in reducing conditions and redox cycles at high temperature, usually unattainable for Bi2O3-based materials, is achieved[1]. These confined heterostructures provide a playground not only for new high ionic conductivity phenomena that are sufficiently stable but also uncover a large variety of possible technological perspectives.

At the second part, I will discuss and show our recent results of high mobile samples realized by, interface confined redox reactions[2], strain induced polarization[3]and modulation doping at complex oxide interfaces. This collection of samples offers unique opportunities for a wide range of rich world of mesoscopic physics.

[1] S. Sanne et al. “Enhancement of the chemical stability in confined δ-Bi2O3”. Nature Materials (2015) doi:10.1038/nmat4266

[2] Y. Z. Chen et al. “A high-mobility two-dimensional electron gas at the spinel/perovskite interface of γ-Al2O3/SrTiO3”. Nature Commun. 4, 1371 (2013)

[3] Y. Z. Chen et al. “Creation of High Mobility Two-Dimensional Electron Gases via Strain Induced Polarization at an Otherwise Nonpolar Complex Oxide Interface” Nano Letters. 3774-3778 (2015) 10.1021/nl504622w