(Invited) Transistors without Semiconductors By Functionalized Boron Nitride Nanotubes

The development of one- and two- dimensional (1D and 2D) electronics are still facing various materials challenges. For instance, the nanotube-based electronics is still hindered by the chiral-specific synthesis of semiconducting carbon nanotubes (CNTs). On the other hand, the zero band gap of graphene is preventing their use in digital switches. Likewise, the structurally analog boron nitride nanotubes (BNNTs) and boron nitride nanosheets (BNNSs) are insulators and not applicable for electronic devices [1, 2]. Apparently, further development of nanoscale electronics will continue to rely on semiconducting nanowires and 2D nanosheets.

In this invited talk, I will discuss about the discoveries of 1D and 2D electronics without using semiconducting nanomaterials:

1) First, the use of BNNTs functionalized with gold quantum dots (QDs-BNNTs) as room-temperature tunneling field effect transistors (T-FETs) will be reviewed [3].

2) Next, the perspective of using QDs-BNNTs as flexible electronics will be evaluated based on our latest study using in-situ scanning tunneling microscopy performed inside transmission electron microscopy (STM-TEM).

3) Finally, I will discuss about effective digital switching of graphene as functionalized with BNNTs.

Acknowledgement:

This work is supported by the U.S. Department of Energy, Basic Energy Sciences, Materials Sciences and Engineering Division (DE-SC0012762) and the Center for Nanophase Materials Sciences (Project CNMS2012-083).

[1]. (Review) J. Wang et. al, Nanoscale 2, 2028 (2010).

[2]. C. H. Lee, et. al, Chem. Mater. 22, 1782 (2010).

[3]. C. H. Lee, et. al, Advanced Materials 25, 2544 (2013).

[4]. (Review) J. A. Jaszczak et. al. MRS Proceedings, 1700, mrss14-1700-mm03-01 (2014).