Silicon Nanowires Self-Purification By Metal-Assisted Chemical Etching of Metallurgical Silicon

Wednesday, October 14, 2015: 15:30
102-B (Phoenix Convention Center)
S. L. Schweizer, X. Li, J. Wang (Martin Luther University Halle-Wittenberg), A. Sprafke (Martin Luther University Halle-Wittenberg), and R. B. Wehrspohn (Martin-Luther-University Halle-Wittenberg)
The purity of metallurgical-grade silicon can be increased to solar grade by metal-assisted chemical etching (MaCE). Metal impurities are removed during the forming of porous silicon nanowires. We present a chemical etching model to explain the different levels of chemical reduction for various metals with pore formation during etching. Our study not only highlights the importance of controlling the metal ion concentration and selecting metal types for engineering porous features in NW, but also explains the reason for the difficulty in removing noble metals such as Cu.