Characterization of InN - In0.25Ga0.75N Quantum Well Laser Structure for 1330 nm Wavelength

In this work, a nitride based wurtzite-strained single quantum well laser has been designed and characterized at 1330 nm wavelength. Here, 12Å InN layer has been used as well material and 15Å In_0.25Ga_0.75N layer has been used as barrier material along with GaN as separate confinement heterostructure for better carrier and optical confinement. To determine the electronic properties of the designed structure, a developed self-consistent method has been solved. Conduction subband calculation has been performed with the solution of Schrodinger equation formed by single band Hamiltonian followed by Poisson's equation. 6-bands k . p Hamiltonian for wurtzite semiconductor has been solved for valence band Schrodinger's equation with Poisson's equation considering band mixing effect, strain due to lattice mismatch and spontaneous and piezoelectric polarization. The interband momentum matrix elements, optical gain, spontaneous emission rate, spontaneous radiative recombination rate and radiative current density have been calculated to analyze the optical properties of the designed laser and a good agreement with previously published works is obtained. All analysis has been performed using injection carrier density of 6×10^-19 cm^-3 at T = 300 K. Due to the strain effect, the wave-function overlap integral has been obtained as 43.27%. From the electronic properties analysis, it has been found that, the designed structure is TE polarized with C1-HH1 and C1-LH1 dominating transitions. From the analysis of optical properties, the obtained spontaneous emission rate is 5945.2 s^-1 at 1329.55 nm and spontaneous emission rate per energy interval per unit volume is 7.21×10²⁷ s^-1cm^-3eV^-1 at same wavelength. The obtained radiative recombination rate is 7.77×10²⁹ s^-1cm^-3 and radiative current density is 149.19 Acm^-2. The optical gain for TE polarization of the designed QW structure is 5261.52cm^-1 at 1336.7 nm.