2D Channel

Wednesday, October 14, 2015: 13:30-17:20
105-B (Phoenix Convention Center)
Chairs:
Mark C. Hersam and Tetsuroh Shirasawa
13:30
850
(Invited) Excellent Wetting Behavior of Yttria on 2D Materials
R. Addou, M. Batzill (University of South Florida), and R. M. Wallace (University of Texas at Dallas)
14:00
851
(Invited) Is the Silicene a 2D Dirac Material?
T. Shirasawa (The University of Tokyo)
14:30
852
(Invited) Solution Processing and Device Integration of Two-Dimensional Black Phosphorus
M. C. Hersam (Northwestern University)
15:00
853
(Invited) Initial State of Graphene Growth on Ge(001) Surfaces
J. Dabrowski, G. Lippert (IHP), and G. Lupina (IHP)
15:30
Intermission
15:50
854
(Invited) Vertical Field Effect Transistor Based on Graphene/Transition Metal Dichalcogenide Van Der Waals Heterostructure
R. Moriya, T. Yamaguchi, Y. Inoue, Y. Sata, S. Morikawa, S. Masubuchi (University of Tokyo), and T. Machida (University of Tokyo)
16:20
855
(Invited) Non-Covalent Functionalization of Epitaxial Graphene for Atomic Layer Deposition of Dielectric Oxides
J. D. Emery (Argonne National Laboratory, Northwestern University), J. M. P. Alaboson, H. J. Karmel, M. C. Hersam (Northwestern University), and M. J. Bedzyk (Northwestern University)
16:50
856
(Invited) Electronic Properties of Self-Assembled Trimesic Acid Monolayer on Graphene Layers
F. Shayeganfar (école polytechnique de montreal)
See more of: D04: Semiconductors, Dielectrics, and Metals for Nanoelectronics 13
See more of: Dielectric Science and Materials
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