Integration of crystalline oxide thin films with semiconductors has attracted considerable attention in recent years. Compared to Si, GaAs have a higher saturated electron velocity and electron mobility, transistors based on GaAs can function at a much higher frequencies. In this talk, SrTiO3 films were grown on GaAs (100) substrates as an intermediate buffer layer for the epitaxial growth of oxide thin films including ferroelectric BaTiO3 and semiconductor ZnO by laser molecular beam epitaxy (LMBE). The properties of the multilayers in terms of growth modes, strain and interface structures were characterized by the insitu reflective high energy electron diffraction (RHEED) pattern. The crystalline quality and surface morphology of the oxide/GaAs heterostructure were investigated respectively by a combination of Xray diffraction (XRD) and atomic force microscopy (AFM). These heterostructure exhibit good functional properties such as ferrelectrisity and resistive switching. Furthermore, the fundamental interface properties of these heterostructure with an emphasis on the strain effect were discussed in relation with the electrical properties. The results provide an understanding of the integration of oxide/GaAs heterostructure with full control over the interface structure at the atomic scale.