I will present the growth of transition metal dichalcogenides films (MoS₂, MoSe₂, WS₂, WSe₂, MoTe₂) and their alloys via chemical vapor deposition and high vacuum techniques.[1] I will highlight the growth of the material on different substrate and the ensuing variation of properties before describing how post-growth processing allows chalcogen exchange towards local change of bandgap.[2] Deposition onto functional substrates - such as ferroelectrics - permits further local modification of the material properties toward device applications.[3]

[1]          J. Mann, et al., Advanced Materials 26 1399 (2014).

[2]          Q. Ma, et al., Acs Nano 8 4672 (2014).

[3]          A. Nguyen, et al., Nano Lett 15 3364 (2015).