Emerging IoT edge-node applications demand new capabilities from semiconductor technologies including unparalleled energy efficiency, reduced package form factor via increased integration, wireless connectivity across a range of low-power wireless protocols, embedded memory for operating systems with smaller footprint and longer battery life, and low cost.  This talk will detail the salient features of 22FDX^TM technology, the industry’s first 22nm fully-depleted silicon-on-insulator technology, which give designers the tools to satisfy these challenging requirements. 

22FDX^TM has capabilities to meet the low-static leakage requirements of edge-node MCUs with low duty-cycles and low-static leakage and the performance and low active power requirements of wearable application processors.  This is accomplished via a next generation FDSOI transistor architecture, a novel body-biasing capability to dynamically adjust threshold voltages, and a wide-range of Vt options to achieve over 50% total power reduction compared to 28nm and device leakages as low as 1pA/um.  To meet the low-cost requirements of IoT, 22FDX^TM was architected to minimize costly double patterning steps while maximizing the overall die shrink.  Over 40% area reduction relative to 28nm is observed in an ARM A9 Neon core.  In addition, the overall BoM and package form factors can be reduced to lower system costs by integrating RF functionality.  To satisfy the wireless connectivity requirements, 22FDX provides an IP offering that satisfies a range of low-power wireless protocols such as WiFi, Bluetooth®, and ZigBee^TM and interface network IPs useful for IoT applications.  Finally, next generation embedded memories, such as MRAM, could be an energy efficient solution that will provide advances to system designs. 

22FDX^TM is the right solution to meet the requirements of emerging IoT applications.