Emerging Memory

Tuesday, 31 May 2016: 09:00-12:00
Aqua 307 (Hilton San Diego Bayfront)
Chairs:
Yaw S. Obeng and Toshiro Hiramoto
09:00
1154
(Invited) Emerging Ferroelectric Devices
A. Gruverman (University of Nebraska-Lincoln)
09:40
1155
(Invited) Comprehensive Assessment of Oxide Memristors As Post-CMOS Memory and Logic Devices
X. Gao, D. Mamaluy, E. C. Cyr, and M. J. Marinella (Sandia National Laboratories)
10:20
Break
10:40
1156
Memcapacitive Characteristics of Metal-Oxide-Semiconductor Capacitor Structures by Compositional Redistribution
P. Yang, Y. J. Noh, Y. J. Baek, H. Zheng, C. J. Kang, and T. S. Yoon (Myongji University)
11:00
1157
Metal Oxide Thin Film Characterization for New Generation Chemical Mechanical Planarization Development
G. B. Basim and A. Karagoz (Ozyegin University)
11:20
1158
Influence of Doping and Tunneling Interface Stoichiometry on n+In0.5Ga0.5As/p+GaAs0.5Sb0.5 Esaki Diode Behavior
S. El Kazzi, A. Alireza (IMEC), C. C. M. Bordallo (LSI/PSI/USP, University of Sao Paulo, Sao Paulo, Brazil), Q. Smets (IMEC), L. Desplanque, X. Wallart (IEMN), O. Richard (imec, Belgium), B. Douhard (imec vzw), A. Verhulst (IMEC), N. Collaert (imec, Belgium), C. Merckling (imec), M. Heyns (KU Leuven), and A. Thean (imec, Belgium)
11:40
1159
Scanning Probe Characterization of Memristors Based on a Li Intercalation Metal Oxide
E. J. Fuller, F. El Gabaly, N. Ware, R. W. Friddle, D. R. Hughart, M. J. Marinella, and A. A. Talin (Sandia National Labs)
See more of: G01: More-than-Moore 3
See more of: Electronic Materials and Processing
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