Nitride Optoelectronics

Tuesday, 31 May 2016: 11:10-16:10
Aqua 310 B (Hilton San Diego Bayfront)
Chairs:
Jennifer K Hite and Soohwan Jang
11:10
1229
(Invited) Fundamental Differences Between the Traditional III-V Compounds and Nitride Semiconductors
T. D. Moustakas (Boston University)
11:40
1230
(Invited) Electrically Pumped Lasers and Light Emitting Diodes in the Ultraviolet-C Band with AlGaN Nanowires
Z. Mi and S. Zhao (McGill University)
12:10
Lunch
13:40
1231
On the Origin of the 4.7 eV Absorption and 2.8 eV Emission Bands in Bulk AlN Substrates
D. Alden, Z. Bryan, B. Gaddy, I. Bryan (North Carolina State University), G. Callsen (Technical University Berlin), A. Koukitu, Y. Kumagai (Tokyo University of Agriculture and Technology), A. Hoffmann (Technical University Berlin), D. Irving, Z. Sitar, and R. Collazo (North Carolina State University)
14:10
1232
(Invited) Semiconductor Nanowires for Optoelectronics and Energy Applications
C. Jagadish (Australian National University)
14:40
1233
Growth of GaN/InGaN Films and Heterostructures Via Super-Atmospheric MOCVD
J. R. Krause (The University of North Carolina at Charlotte) and E. B. Stokes (University of North Carolina at Charlotte)
15:00
Break
15:10
1234
(Invited) Photon Managements By Employing Nanostructures for Light Emission Diodes
J. H. He (King Abdullah University of Science and Technology)
15:40
1235
(Invited) New Directions in GaN Photonics Enabled by Electrochemical Processes
C. Zhang, G. Yuan, K. Xiong, S. H. Park, and J. Han (Yale University)
See more of: H01: Wide Bandgap Semiconductor Materials and Devices 17
See more of: Electronic and Photonic Devices and Systems
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