Nitride Optoelectronics

Tuesday, 31 May 2016: 11:10-16:10
Aqua 310 B (Hilton San Diego Bayfront)
Chairs:
Jennifer K Hite and Soohwan Jang
12:10
Lunch
13:40
On the Origin of the 4.7 eV Absorption and 2.8 eV Emission Bands in Bulk AlN Substrates
D. Alden, Z. Bryan, B. Gaddy, I. Bryan (North Carolina State University), G. Callsen (Technical University Berlin), A. Koukitu, Y. Kumagai (Tokyo University of Agriculture and Technology), A. Hoffmann (Technical University Berlin), D. Irving, Z. Sitar, and R. Collazo (North Carolina State University)
14:10
14:40
Growth of GaN/InGaN Films and Heterostructures Via Super-Atmospheric MOCVD
J. R. Krause (The University of North Carolina at Charlotte) and E. B. Stokes (University of North Carolina at Charlotte)
15:00
Break
15:10
(Invited) Photon Managements By Employing Nanostructures for Light Emission Diodes
J. H. He (King Abdullah University of Science and Technology)
15:40
(Invited) New Directions in GaN Photonics Enabled by Electrochemical Processes
C. Zhang, G. Yuan, K. Xiong, S. H. Park, and J. Han (Yale University)