We use CVD graphene grown on copper foil and silicon wafer (n-doped <100>, 1-10 Ohm·cm, 300 nm oxide, LG Siltron). First, (5x5 mm2) window pattern is exposed on silicon through photolithography. The oxygen layer of the patterned area is removed using BOE (7:1 water:HF) for 4 minutes. The photoresist is removed in acetone at least 10h. A square shape electrode with Ti (10 nm)/Au (90 nm) is deposited on silicon oxide. Ag (300 nm) is deposited on backside of silicon and annealed to have an Ohmic contact. After all these processes are finished, graphene was transferred. Doping on graphene is one way to increase the efficiency of Schottky junction solar cell. We compare none-doped graphene with chemically doped graphene by HNO3 and bis (trifluoromethanesulfonyl) amide. This could be an alternative for the cheap and environmentally friendly solar cell in the future.