2103
Label Free Detection of Gene Mutation by Applying a Ce2(Zr1-xTix)Oy Sensing Film Based Electrolyte – Insulator – Semiconductor (EIS) Biosensors Using Sol-Gel Method

Wednesday, 4 October 2017: 14:30
Chesapeake J (Gaylord National Resort and Convention Center)
S. P. Bag (CHANG GUNG UNIVERSITY), P. Garu, K. Singh (Chang Gung University), B. S. Lou (Chang Gung University and Chang Gung Memorial Hospital), J. L. Her (Chang Gung University), and T. M. Pan (Chang Gung Memorial Hospital, Chang Gung University)
In recent scenario, various kinds of high-k materials such as rare-earth (RE) oxide based film are the promising candidate for achieving pH response. These types of high-k materials have been used as gate oxide material to fabricate electrolyte–insulator–semiconductor (EIS) sensor devices as pH sensing membranes due to good sensing performance with their high dielectric constant, high resistivities, and large band gap energies]. Employing the Ce2(Zr1-xTix)Oy (CZT) oxide sensing membrane based EIS device has been rarely studied for biosensing applications. In this study, a bio-membrane/ Ce2(Zr1-xTix)Oy (CZT) /Si EIS structure was used as a disposable bio-chemical transducer for DNA mutation. The advantage of this structure is easy to fabricate and has greater performance than conventional devices. Zr 4+ rich content CZT based EIS devices exhibited the best sensing properties (sensitivity: 62.31 mV/pH, , lower hysteresis voltage : ~ 3.36 mV and lower drift rate : ~1.1 mV/hr). Being higher sensing properties of Zr 4+ rich content CZT is considered as a potential candidate for detection of DNA /protein due to change in the surface potential of CZT membrane. To apply the detection of ssDNA and cDNA hybridization was successfully observed in Zr 4+ rich content CZT based EIS devices