Fabrication of Green Light-Emitting Diode Using N-in2O3 nanorods Formed on Surface Modified P-GaN Template

Tuesday, 3 October 2017
Prince George's Exhibit Hall D/E (Gaylord National Resort and Convention Center)
D. S. Shin, T. G. Kim, D. Heo, H. Yoon, and J. Park (Hanyang University)
The metal-oxide (MO) nano-materials with wide energy band gap are promising candidates for versatile research fields such as transparent electrode, light emitters, full-color display, sensors, etc, due to their unique semiconducting properties. Especially, various nanostructures of MO have great advantages to realize the high efficiency optoelectronic devices by modification of surface and light guiding effects. Recently, more assertive efforts to use MO nanomaterials as for various nano-hybrid LEDs combined with MO nanostructures have been performed using p-GaN templates. In this study, we demonstrate the green light-emitting diodes (LEDs) using n-In2O3 nanorods(NRs)/p-GaN pn junction with an insertion of Ga2O3 interfacial layer formed on p-GaN surface by O2 plasma treatment. The X-ray photoelectron spectroscopy patterns clearly show the formation of thin Ga2O3 on p-GaN surface by O2 plasma treatment. The In(OH)3 NRs are uniformly grown on surface treated p-GaN by using hydrothermal method, which were finally converted to In2O3 NRs by calcination process. The electroluminescence of fabricated LEDs using n-In2O3/ Ga2O3/p-GaN heterojunction shows the green emission (λ ~ 554 nm) at forward bias condition. As a possible light emission mechanism from our suggested structures, the various defects energy states mediated green emissions were considered.