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(Invited) 2D Semiconductors in Large-Area Flexible Opto/Electronics

Thursday, 17 May 2018: 09:20
Room 201 (Washington State Convention Center)
T. D. Anthopoulos (King Abdullah University of Science & Technology (KAUST))
Successful implementation of two-dimensional layered materials (2DLMs) in opto/electronic applications of the future would require not only the production of high quality materials in large volumes, but also the design of innovative, low power devices that can be implemented onto arbitrary substrate materials, ideally using high-throughput manufacturing paradigms. In this presentation I will discuss the development of low operating voltage 2DLMs-based opto/electronic devices using a combination of self-assembly and top-down manufacturing techniques. Particular emphasis will be placed on the use of adhesion lithography (a-Lith) for the patterning of arbitrary width sub-20 nm nanogaps formed between various dissimilar electrode materials and its combination with 2DLMs for the development of prototype large-area, nano-gap devices including co-planar Schottky diodes, photodetectors, and low-power field-effect transistors.