The ever-increasing advancements in semiconductor technology and continuous scaling of CMOS devices demands need for new low-k dielectric materials. Boron Carbide (B₄C) has attracted recent attention due to its complicated crystalline structure and interesting properties. B₄C is the third hardest material with a hardness > 30GPa after diamond and cubic boron nitride [1]. However, with increase in temperature, the hardness of diamond and cubic boron nitride decreases gradually. B₄C is characterized to be the hardest material at even above 1100°C [2]. Other interesting properties exhibited by boron carbide are low specific weight, high modulus, high chemical stability and good wear resistance. These properties make boron carbide a promising material for applications in cutting tools.

In this study, electrical properties of hydrogen doped boron carbide thin films will be investigated. Boron carbide films are deposited by magnetron RF sputtering of B₄C target. Films are deposited at different temperatures in presence of hydrogen/argon gas to investigate the influence of temperature and hydrogen on electrical properties of boron carbide thin films.

References

[1] T. Eckardt ,U, K. Bewiloguaa , G. van der Kolkb , T. Hurkmansb , T. Trinhb , W. Fleischer, Improving tribological properties of sputtered boron carbide coatings by process modifications., Surf. Coat. Technol., 123 (2000), p. 69

[2] S. Ulrich, H.Ehrhardt, J.Schwan, R.Samlenski, R.Brenn, Subplantation effect in magnetron sputtered superhard boron carbide films, Diamond Relat. Mater., 7 (1998), p. 838