Recently, neuroelectronics based on neurotechnology have been extensively investigated for sensitive detection of neural signals and emulation of human brains. However, there have been some difficulties and challenges with respect to realization of high performance wearable neuroelectronics. Solution-processed high-k dielectric films have attracted considerable attention due to their outstanding electrical characteristics and technological merits. For this reason, big efforts to employ such dielectric films into the wearable neuroelectronic devices have been intensively investigated in the field of bio-electronics. In this presentation, we will demonstrate high-quality solution-processed high-k dielectric films composed of zirconium oxide (ZrO₂) and hafnium oxide (HfO₂) for wearable neuroelectronic devices. With an optimized process of fabrication and a careful choice of materials, high-quality dielectric films can be achieved. The characterization of dielectric films by atomic force microscopy, scanning electron microscopy, transmittance and x-ray photoelectron spectroscopy measurements can explain the origin of suppressed leakage currents and intrinsic defect states in the films. We will also discuss the demonstration of neuroelectronics consisting of solution-processed high-k dielectric films, which describes the short-term and long-term memories. This work was supported by the National Research Foundation of Korea grant funded by the Korea government (MSIP) (NRF-2017R1A2B2003808).