Like graphene, 2D semiconductors are formed by mechanical exfoliation using scotch tapes in general. Among many nanosheet materials, molybdenum disulfide (MoS₂) semiconductor has been the most extensively studied, since it has displayed excellent carrier mobility, high on/off current ratio, and good subthreshold swing in a field-effect transistor (FET) form with n-type conduction. However, fabricating 2D MoS₂ by the mechanical exfoliation limits the length scale only to a few micrometers. So, one of the remaining important issues is how to fabricate such 2D MoS₂ in a large scale, which would open the gate toward more practical applications enabling photolithographic device/circuit patterning. Several research groups have thus recognized the issue, studying and reporting on the chemical vapor deposition (CVD) of large scale MoS₂ 2D sheets. Yet, only a few studies of full photolithographic patterning and integration for polygrain 2D MoS₂-based devices in large scale on glass have been reported.

We demonstrate CVD-grown large scale polygrain MoS₂ nanosheets and related field effect transistor (FET) circuits, which were patterned and integrated by photolithography on glass substrate. CVD MoS₂ nanosheet transistors are applied to demonstrate their possibility as switching/driving elements for the pixel of organic light-emitting diode (OLED) display. The maximum mobility of MoS₂ FETs either as switch or as driver was ~1 and 7 cm²/Vs at V_D=1 V