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Fabrication of Flexible Optoelectronic Devices Based on MoS2/Graphene Hybrid Patterns By a Soft Lithographic Patterning Method

Tuesday, 15 May 2018
Ballroom 6ABC (Washington State Convention Center)
K. S. An, M. A. Kang, W. Song, S. Myung, S. S. Lee, J. Lim, and Y. R. Lim (Korea Research Institute of Chemical Technology)
In this presentation, cross-stacking MoS2/graphene hybrid patterns for the application to advanced flexible opto-electronic devices have been performed by the soft-lithographic patterning method. Well-defined MoS2/graphene hybrid pattern was produced simply by a soft lithographic patterning technique without any defects. In-depth exploration for the optical properties of diverse cross-stacking photodetectors based on MoS2/graphene patterns was also implemented. Furthermore, cross-stacking MoS2/graphene based on the woven structure was transferred onto a flexible polyethylene terephthalate (PET) substrate for the analysis of mechanical properties of devices. Eventually, this method should pave the way for practical applications of transparent and flexible nano-electronic devices based on 2D materials.