Cu₂(ZnSn)(S)₄ (CTZS) has number of advantages over other solar this film such as CuInGaSe₂ (CIGS) due to its higher band gap. Generating such thin film layers by electrochemical methods is particularly attractive because the lower generating budget and the higher throughput. According to literature it is default with many challenges to produce CTZS from electrodeposition methods due to wide range of standard potential of each elements of CTZS ^1-4. Sulfur atomic ratio is about 50% of CTZS alloy which add more complexity to electrochemical processing.

We introduce in this work electropulsing techniques on order to electroplate at transient current instead of steady state current. Electrolyte composition was similar to dilute concentration from the previous work which is is considerably more dilute in comparison to conventional electrolytes used in the literature^1-4. The bath composition is: 0.0042 M CuSO₄, 0.0031 M ZnSO₄, 0.035 M SnCl₂, 0.005 M Na₂S₂O₃, and 0.045 M Na₂S₂O₃. PHydrion is used to buffer the electrolyte to pH=2, and supporting electrolyte is 0.6 M LiCl.

Experiments was conducted at a rotating disk electrode which offers measureable characterization of the rotating flow at room temperature. Electrochemical pulsing current behavior study at different off and on time and current in Fig. 1 and 2. The effects of pulsing time and current density on the CTZS thin film adhesion and atomic composition are discussed. The annealing was carried out on tube furnace under sulfur element atmosphere with no extra material addition. The amount of sulfur on the absorber layer was optimized. The alloy composition was examined using Energy-dispersive X-ray spectroscopy technique (EDS) Fig. 2. XRD analysis method used to characterized CTZS thickness and crystallography.