H02 Poster Session

Monday, 14 May 2018: 18:00-20:00

Ballroom 6ABC (Washington State Convention Center)

1465

Study of the Influence of the Dielectric Composition of Al/Ti/ZrO₂:Al₂O₃/TiN/Si/Al Structures on the Resistive Switching Behavior for Memory Applications

H. Castán, S. Dueñas (UNIVERSIDAD DE VALLADOLID), K. Kukli (University of Helsinki, University of Tartu), M. Kemell, M. Ritala, and M. Leskelä (University of Helsinki)

1466

Using the Octagonal Layout Style to Implement the Pass MOSFET to Improve the Electrical Performance of the CL–LDO Voltage Regulator

R. F. Martucci and S. P. Gimenez (University Center of FEI)

1467

Using Ellipsoidal Layout Style to Boost the Electrical Performance of the MOSFETs Regarding the 180 nm CMOS ICs Manufacturing Process

W. S. Cruz (University Center of FEI), J. W. Swart (FEEC/UNICAMP), and S. P. Gimenez (University Center of FEI)

1468

Parasitic Conduction on Ω-Gate Nanowires SOI nMOSFETs

V. C. P. Silva, J. A. Martino (University of Sao Paulo), and P. G. D. Agopian (UNESP, Sao Joao da boa Vista)

See more of: H02: Advanced CMOS-Compatible Semiconductor Devices 18
See more of: Electronic and Photonic Devices and Systems

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