GaN Devices

Monday, 14 May 2018: 08:40-11:50
Room 213 (Washington State Convention Center)
Chair:
Jennifer K Hite
08:40
1401
(Invited) Enhanced Light Output Power from Eu-Doped GaN Narrow-Band Red Light-Emitting Diodes By Actively Controlling Photon Fields
Y. Fujiwara, T. Inaba, K. Shiomi, and J. Tatebayashi (Osaka University)
09:10
1402
Influence of Size Reduction and Current Density on the Optoelectrical Properties of Green III-Nitride Micro-LEDs
D. H. Kim and T. Y. Seong (Korea University)
09:30
Break
 
1403
(Invited) GaN Sensors and Electronics for Missions to Hot Planets (Cancelled)
10:20
1404
(Invited) Gallium Nitride Device Technology for Commercial RF Applications
B. Green (NXP Semiconductors)
10:50
1405
(Invited) Passivation of High K/GaN Interfaces for GaN Tunnel FETs
A. C. Kummel (University of California, San Diego), W. Li (University of Notre Dame), A. Kerr, E. Chagarov, S. Gu, T. Kaufman-Osborn (University of California, San Diego), S. Madisetti (SUNY College of Nanoscale Science and Engineering), J. Wu, P. Asbeck (University of California, San Diego), S. Oktyabrsky (College of NanoScience SUNY), and P. Fay (University of Notre Dame)
 
1406
(Invited) Current-Induced Degradation in Bulk GaN Vertical Schottky Diodes (Cancelled)
See more of: H01: Wide Bandgap Semiconductor Materials and Devices 19
See more of: Electronic and Photonic Devices and Systems
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