Electrochemical Atomic Layer Deposition: Self-Terminated Electrodeposition Reactions

Tuesday, 15 October 2019: 16:40
Room 309 (The Hilton Atlanta)
Y. Liu (Argonne National Laboratory), D. Gokcen, S. H. Ahn (National Institute of Standards and Technology), N. L. Ritzert (NIST), R. Wang (National Institute of Standards and Technology), E. Gillette (NIST), S. Ambrozik (National Institute of Standards and Technology, NIST), C. Hangarter (NIST), N. Dimitrov (Binghamton University), H. You (Argonne National Laboratory), U. Bertocci, and T. P. Moffat (National Institute of Standards and Technology)
Recently, an inexpensive “wet form” of ALD based on self-terminated electrodeposition reactions was uncovered that enables controlled formation of ultrathin films of Pt, Ir and iron group metals and alloys thereof. Common to all these systems is the role of reaction intermediates, namely adsorbed H or OH-, in the quenching of metal deposition reactions. Further details on the mechanisms of self-terminated deposition reactions including its extension to substrates beyond Au and role in alloy co-deposition will be discussed. Likewise, the utility and relevance of the process to the synthesis of nanoparticles and thin films, and the study of bimetallic electrocatalysts will be detailed.