D01 Poster Session

Monday, 14 October 2019: 18:00-20:00
Grand Ballroom (The Hilton Atlanta)
Chairs:
Durgamadhab Misra , Vimal H. Chaitanya and Koji Kita
Tailoring the Permittivity in Tellurium Dioxide By Co-Doping
Keerthana and V. Adyam (Indian Institute of Technology, Kharagpur)
Novel Degradation Model of Igzo TFT on High Drain Bias Stress
K. Kim (SungKyunKwan univ. and Samsung Display Company), M. Seo (Samsung Display Company), and B. D. Choi (Sungkyunkwan University)
Formation of Ohmic Contacts to n-GaAs at Temperatures Compatible with Indium Flip-Chip Bonding
M. G. Wood, C. P. Hains, P. S. Finnegan, C. A. Stephenson, J. F. Klem, and Q. Looker (Sandia National Laboratories)
Electro-Optically Active Polyaniline-Polypyrrole Double Layer Polymer Semiconducting Composite
K. Komaba and H. Goto (University of Tsukuba)
Interfacial Treatment of the SiC-SiO2 Interface By Shallow Boron and Barium Multi-Charged Ion Implantation
M. H. Shaim and H. Elsayed-Ali (Old Dominion University)
The Line Roughness Improvement in Self-Aligned Multiple Patterning
E. Zheng, Q. Han, and H. Zhang (Semiconductor Manufacturing International Corporation)
The Metal Gate Cut Process(Part I): Plasma Assistant CD Shrinkage
S. L. Ji, S. Liu, and H. Zhang (Semiconductor Manufacturing International Corporation)
See more of: D01: Semiconductors, Dielectrics, and Metals for Nanoelectronics 17
See more of: Dielectric Science and Materials
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