H03 Poster Session

Tuesday, 15 October 2019: 18:00-20:00
Grand Ballroom (The Hilton Atlanta)
Chair:
Balaji Raghothamachar
A Numerical Study of the V/III Ratio in the MOCVD Process with Pulsed Injection Method
J. C. Chen, W. J. Lin, and C. Hu (National Central University)
Analytical Model for the Breakdown Voltage in Punch-through IGBTs
C. Zhu (Florida State University) and P. Andrei (Florida A&M University and Florida State University)
Safe Operation Area of Maximum Temperature for Planar Gate SiC Mosfet Under Avalanche Stress
X. Li, Z. Hou, X. Tong, X. Deng (University of Electronic Science and Technology of China), J. Jiang (Texas A&M University), Y. Zhang, and B. Zhang (University of Electronic Science and Technology of China)
The Thermal Characteristics of AlGaN/GaN Hemts with Different Channel Width
W. C. Lin, Y. N. Zhong, M. Y. Tsai, W. C. Ho, Y. H. Yu, and Y. M. Hsin (National Central University)
Post-Annealing on the Ohmic Contact and Gate Recess Simultaneously in AlGaN/GaN MIS-Hemt
P. C. Shen, W. C. Ho, M. Y. Tsai, and Y. M. Hsin (National Central University)
See more of: H03: Gallium Nitride and Silicon Carbide Power Technologies 9
See more of: Electronic and Photonic Devices and Systems
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