H01 - Compound Semiconductor Growth and Processing

Monday, 14 October 2019: 08:20-12:20
Room 213 (The Hilton Atlanta)
08:20
Introductory Remarks
08:30
(Invited) High Performance Plug-and-Play Nanoelectronic Devices
M. A. Filler (Georgia Institute of Technology)
09:00
(Invited) Homoepitaxial GaN Growth and Substrate-Dependent Effects
J. K. Hite, T. J. Anderson, J. C. Gallagher, M. A. Mastro, J. A. Freitas Jr., K. D. Hobart, F. J. Kub, and C. R. Eddy Jr. (U.S. Naval Research Laboratory)
09:30
Break
10:30
(Invited) Ion Implantation and Activation of n- and p-Type Dopants in GaN
T. J. Anderson, J. C. Gallagher (NRL), A. G. Jacobs, B. Feigelson, J. K. Hite, M. A. Mastro, G. M. Foster (U.S. Naval Research Laboratory), A. D. Koehler, and K. D. Hobart (Naval Research Laboratory)
11:00
Advancements in High Indium Content Alinn Grown Via Metal Modulated Epitaxy and Application Towards Polar/Non-Polar Optical Devices
Z. Engel, E. A. Clinton, C. M. Matthews, and W. A. Doolittle (Georgia Institute of Technology)
11:20
GaN-Based Dilute Magnetic Semiconductors for Room Temperature Neuromorphic and Quantum Computing
C. Zhou (MST), A. Ghods, V. G. Saravade (Missouri S&T), and I. Ferguson (Missouri Science and Technology)
11:40
Etching Mechanisms in III-V Semiconductors: Electrochemical Etching of Indium Phosphide
D. N. Buckley, N. Quill (Department of Physics, University of Limerick, Ireland, Bernal Institute, University of Limerick, Ireland), C. O'Dwyer (Tyndall National Institute, School of Chemistry, University College Cork, Ireland), and R. P. Lynch (Department of Physics, University of Limerick, Ireland, Bernal Institute, University of Limerick, Ireland)