D01 - Novel Transistors

Monday, 14 October 2019: 08:25-10:30
Room 208 (The Hilton Atlanta)
Chairs:
Durgamadhab Misra and Stefan De Gendt
08:25
Welcoming Remarks
08:30
(Invited) Negative Capacitance III-V Finfets for Ultra-Low-Power Applications
E. Y. Chang, Q. H. Luc, and Y. C. Lin (National Chiao Tung University)
09:10
Germanium-Tin Junctionless p-Finfets: Effects of Channel Doping Concentration and Fin Width
Y. Chuang, P. Y. Chiu, C. T. Huang, P. C. Shih, C. Y. Liu (National Taiwan University), G. L. Luo (Taiwan Semiconductor Research Institute), and J. Y. Li (Taiwan Semiconductor Research Institute, National Taiwan University)
09:30
Break
09:50
(Invited) High-Performance 2D Tellurium Transistors Towards CMOS Logic Applications
G. Qiu, Y. Wang, W. Wu, and P. D. Ye (Purdue University)
See more of: D01: Semiconductors, Dielectrics, and Metals for Nanoelectronics 17
See more of: Dielectric Science and Materials
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