G05 - Memristive Properties of Complex Oxides

Monday, 14 October 2019: 08:00-09:40
Room 210 (The Hilton Atlanta)
Chair:
Stephen S. Nonnenmann
08:00
(Invited) Impact of Stoichiometry and Interface Configuration on the Time Stability and the Speed-Limiting Step in Memristive SrTiO3 Cells
R. Dittmann (Peter Gruenberg Institute (PGI-7)), C. Bäumer, S. Siegel (Forschungszentrum Juelich GmbH), F. V. E. Hensling (Peter Gruenberg Institute (PGI-7)), T. Heisig, A. Gutsche, and S. Menzel (Forschungszentrum Juelich GmbH)
08:40
Improved Switching Stability and Resistance Ratio in SrTiO3-Based Resistive Switches By Ni Nanoparticles Exsolution
J. C. Gonzalez-Rosillo (Massachusetts Institute of Technology), J. Spring, E. Sediva (ETH Zurich, Massachusetts Institute of Technology), A. J. Carrillo, Z. D. Hood, and J. L. M. Rupp (Massachusetts Institute of Technology)
09:00
Low-Voltage, CMOS-Free Synaptic Memory Based on LiXTiO2 Redox Transistors
L. Yiyang (Sandia National Laboratories on behalf of the), E. J. Fuller (Sandia National Labs), S. Asapu (University of Massachusetts-Amherst), S. Agarwal (Sandia National Laboratories), T. Kurita (Fujitsu Laboratories, Ltd.), J. J. Yang (University of Massachusetts, Amherst), and A. A. Talin (Sandia National Laboratories)
09:20
Switching an Analogue to Digital Computing Property Based on Memristance By Lithiation – Opportunities on Lithium Titanates
J. C. Gonzalez-Rosillo, K. M. Mullin, R. Pfenninger, M. Balaish, and J. L. M. Rupp (Massachusetts Institute of Technology)
See more of: G05: Oxide Memristors 2
See more of: Electronic Materials and Processing
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