D01 - Characterization

Kita, Koji

Tuesday, 15 October 2019: 08:30-10:10

Room 208 (The Hilton Atlanta)

Chairs:

Koji Kita and Kandabara Tapily

08:30

(Invited) A Deep Level Transient Spectroscopy Study of Hole Traps in Gese-Based Layers for Ovonic Threshold Switching Selectors

E. R. Simoen, P. C. Hsu, D. Lin (Imec), A. Stesmans (University of Leuven, Belgium), L. Goux, R. Delhougne, and G. S. Kar (Imec)

09:10

Trap Characterization of ALD Al₂O₃/4H-SiC Metal-Oxide-Semiconductor Interfaces

I. U. Jayawardhena, A. Ahyi, T. Isaacs-smith (Auburn University), R. P. Ramamurthy, D. Morisette (Purdue University), and S. Dhar (Auburn University)

09:30

Data-Driven Modeling of Dielectric Breakdown Phenomena in Polymers

P. Shetty, L. Chen, R. Batra (Georgia Institute of Technology), C. Wu, Z. Li, Y. Cao (University of Connecticut), and R. Ramprasad (Georgia Institute of Technology)

09:50

Break

See more of: D01: Semiconductors, Dielectrics, and Metals for Nanoelectronics 17
See more of: Dielectric Science and Materials

<< Previous Session | Next Session >>