G03 - Materials and Characterizations

Monday, 14 October 2019: 08:00-11:00
Room 211 (The Hilton Atlanta)
Chairs:
Junichi Murota and Cor Claeys
08:00
Welcoming Remarks
08:10
(Keynote) Border-Trap Characterization for Ge Gate Stacks Using Deep-Level Transient Spectroscopy
H. Nakashima, W. C. Wen, K. Yamamoto, and D. Wang (Kyushu University)
08:50
(Invited) Photoemission-Based Characterization of Gate Dielectrics and Stack Interfaces
S. Miyazaki and A. Ohta (Graduate School of Engineering, Nagoya University)
09:20
(Invited) Electrical Activity of Extended Defects in III-V Semiconductors
E. R. Simoen, P. C. Hsu, Y. Mols, B. Kunert, R. Langer, N. Waldron, G. Eneman, N. Collaert (Imec), M. Heyns, C. Claeys (KU Leuven), and C. Merckling (Imec)
09:50
Break
10:10
Anisotropic Biaxial Strain Evaluation in Carbon-Doped Silicon Using Water-Immersion Raman Spectroscopy
K. Yoshioka (Meiji University), R. Yokogawa (JSPS Research Fellow), N. Sawamoto, and A. Ogura (Meiji University)
10:30
(Invited) Emerging Low-Dimensional Material Electronics and Photonics
H. Wang (University of Southern California)
See more of: G03: Semiconductor Process Integration 11
See more of: Electronic Materials and Processing
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