D02 - Plasma Nanoscience and Technology 1

Wednesday, 16 October 2019: 08:20-12:00
Room 208 (The Hilton Atlanta)
Chairs:
Thorsten Lill , Peter Mascher , Uros Cvelbar and Oana Leonte
08:20
(Invited) Plasma Etching at Ultra-Low Temp, Pressure and Radical Conditions for Next Generation Nano Chip Fabrication
J. Park (Samsung Electronics)
08:55
(Invited) Towards Selective Etching with Nanometric Control Using Remote Plasma Source
E. Pargon, V. Renaud (Univ. grenoble Alpes, CNRS, LTM), C. Petit-Etienne, F. Pinzan, E. Despiau-Pujo, G. Cunge, and O. Joubert (Univ. Grenoble Alpes, CNRS, LTM)
09:30
Intermission
09:50
(Invited) Characterization of Isotropic Thermal ALE of Oxide Films in Nanometer-Size Structures
A. Fischer, A. Routzahn, and T. Lill (Lam Research)
10:25
(Invited) Plasma Processing with Feedback Control of Wafer Temperature By Non-Contact Temperature Measurement System
T. Tsutsumi, H. Kondo, K. Ishikawa (Nagoya University), K. Takeda, T. Ohta (Meijo University), M. Sekine (Nagoya University), M. Ito (Meijo University), and M. Hori (Nagoya University)
11:00
Electromigration of Molybdenum Capped Copper Lines
J. Q. Su, M. Li, and Y. Kuo (Texas A&M University)
11:20
Precise Control of Poly-Silicon Height By Plasma Etching in Finfet Technology Node
Y. Wang (Semiconductor Manufacturing International Corporation), D. Zhang (Semiconductor Manufacturing International Coporation), and H. Zhang (Semiconductor Manufacturing International Corporation)
11:40
Metallic Foams Prepared By Electrolytic Plasma Deposition
F. Durut, R. Botrel (Commissariat à l'Energie Atomique), J. Pinot, S. Rocher (CEA), C. Chicanne (Commissariat à l'Energie Atomique), M. Theobald (CEA), and V. Vignal (Institut Carnot de Bourgogne, Université de Bourgogne)
See more of: D02: Plasma Nanoscience and Technology 4
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