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(Invited, Digital Presentation) Fatigue-Resistant of Ag Sinter Joining on Ni-P/Pd/Au Finished DBA Substrate with Thick Ni-P Layer during Thermal Shock Test

Wednesday, 1 June 2022: 09:00
West Meeting Room 111 (Vancouver Convention Center)
C. Chen and K. Suganuma (Osaka University)
The wide band-gap (WBG) semiconductor, such as silicon carbide (SiC) and gallium nitride (GaN), are widely expected to replace conventional Si-based chips, which provide the power modules with higher working temperature larger than 250 degrees. Ag paste sinter joining emerges as a promising alternative for the die attach material in WBG power devices owing to its superior electrical/thermal conductivity as well as a high melting point of 960℃. For Ag paste sinter joining on WBG chip or substrate, most studies are focusing on Ag metallization layers by which the Ag-Ag interface delivers high bonding strength because of the chemical/structural similarity. However, with the superior anti-oxidation/corrosion property, Au metallization layers ensure the Ag-Au joint much wider usage environment than Ag-Ag joint.

The study was carried out to develop a highly reliable Ag-Au sintering joint in SiC chip and Direct bonded aluminum (DBA) power modules. The DBA substrate was strengthened by an electroless nickel/electroless palladium/immersion gold (ENEPIG) metallization layer. ENEPIG plated DBA substrate was modified to possess superior mechanical strength by thickening the Ni layer with the thickness of 7µm and 20µm. The reliability of SiC/DBA die-attached module by Ag-Au joining was evaluated during a long-term thermal shock test (TST) from -50℃ to 250℃ up to 1000 cycles. In the case DBA with a Ni metallization layer of 7µm, severe plastic deformation occurred at the Ag-Au interface. By thickened ENEPIG layer with Ni-P layer to 20µm, the Ag-Au interfacial deformation derived from Al plastic deformation was successfully suppressed even after 1000 cycles. The shear strength of as-sintered Ag-Au joint was evaluated to be larger than 35 MPa, but degradation was still found to be the interfacial delamination between Ag paste and ENEPIG substrate during thermal shock test for the two ENEPIG metallization cases. The bonding interface and fracture characteristics were systematically investigated, which provide basic understanding between microstructural evolution and reliability of Ag-Au joint during TST.

See more of: H01 - SiC Devices and Characterization
See more of: H01: Wide-Bandgap Semiconductor Materials and Devices 23
See more of: Electronic and Photonic Devices and Systems
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