H01 - SiC Devices and Characterization

Wednesday, 1 June 2022: 08:00-10:00
West Meeting Room 111 (Vancouver Convention Center)
Chairs:
Jennifer K. Hite and Travis J. Anderson
08:00
1314
(Invited) A National Multi-User Silicon Carbide Research and Fabrication Facility
H. A. Mantooth, Z. Chen, G. Salamo, S. Davis (University of Arkansas), and J. Ransom (XFAB, Inc.)
08:30
1315
(Invited) Updated Issues Regarding Threshold-Voltage Instability in SiC MOSFETs
A. Lelis, D. Habersat, D. Urciuoli, and R. Green (U.S. Army Research Laboratory)
09:00
1316
(Invited, Digital Presentation) Fatigue-Resistant of Ag Sinter Joining on Ni-P/Pd/Au Finished DBA Substrate with Thick Ni-P Layer during Thermal Shock Test
C. Chen and K. Suganuma (Osaka University)
09:30
1317
(Invited, Digital Presentation) Interface Charge Trapping and Scattering in SiC MOSFET Channels
S. Dhar, S. Das, A. Ahyi, and M. Kuroda (Auburn University)
See more of: H01: Wide-Bandgap Semiconductor Materials and Devices 23
See more of: Electronic and Photonic Devices and Systems
<< Previous Session | Next Session >>