H01 - Optical Devices and Characterization

Tuesday, 31 May 2022: 10:00-12:20
West Meeting Room 111 (Vancouver Convention Center)
Chairs:
Spyridon Pavlidis and Jennifer K. Hite
10:00
1301
(Invited) Characterization of Semiconductor Crystals Based on Omnidirectional Photoluminescence (ODPL) Spectroscopy
K. Kojima, S. Ichikawa, O. Maida (Osaka University), K. Shima, and S. Chichibu (Tohoku University)
10:30
1302
(Invited) Recent Progress on Molecular Beam Epitaxy of AlGaN Nanowires for Deep Ultraviolet Light Emitting Devices
S. Zhao, Q. Zhang, H. Parimoo, and X. Yin (McGill University)
11:00
1303
Comparison of Temperature and Light Distributions Around Nano-Resistors in SSI-LEDs
A. Samuel and Y. Kuo (Texas A&M University)
11:20
1304
Advantages of Distributed p-Type Electron-Blocking Layers in InGaN Blue Light-Emitting Diodes
R. T. Velpula (University of Houston), B. Jain, R. T. Velpula, F. M. Shakiba, and H. P. T. Nguyen (New Jersey Institute of Technology)
11:40
1305
Quasi-Epitaxial Growth of β-Ga2O3 Coated Wide Bandgap Semiconductor Tape for Flexible UV Photodetectors
X. Tang (KAUST) and X. Li (King Abdullah University of Science and Technology)
12:00
1306
Chemical Vapor Deposition of Wide-Bandgap p-Type Semiconductor Cuprous Iodide for Optoelectronic Device Applications
E. K. Spear (Harvard University), C. M. Chang (Advanced Research Projects Agency-Energy, Harvard University), L. M. Davis (Tufts University), and R. G. Gordon (Harvard University)
See more of: H01: Wide-Bandgap Semiconductor Materials and Devices 23
See more of: Electronic and Photonic Devices and Systems
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