D02 - Materials Growth and Processing 1

Tuesday, 31 May 2022: 08:00-11:30
West Meeting Room 116 (Vancouver Convention Center)
Chairs:
Dong-Kyun Ko and John Conley
08:00
Welcoming Remarks
08:10
(Invited) Energy Enhanced Atomic Layer Deposition (EEALD)
J. Conley, Jr (Oregon State University)
08:50
(Invited) High-κ Gate Oxide Integration and Ohmic Contact Development for AlGaN/GaN MISHEMTs
S. Seidel, V. Garbe, A. Schmid (TU Bergakademie Freiberg), and J. Heitmann (TU Bergakademie Freiberg, Fraunhofer THM Freiberg)
09:30
Break
10:30
PECVD Silicon Nitride-Based Multilayers with Optimized Mechanical Properties
B. Ahammou, P. Bhattacharyya, F. Azmi (McMaster University), C. Levallois (INSA Rennes), J. P. Landesman (Univ Rennes1), and P. Mascher (McMaster University)
10:50
Microscopic Views of Ge Segregation and Scavenging Ge on Thin Si on Epi-Ge(001)
Y. T. Cheng, H. W. Wan (National Taiwan University), T. W. Pi (National Synchrotron Radiation Research Center), J. Kwo (National Tsing Hua University), and M. Hong (National Taiwan University)
11:10
HCl-Assisted MOCVD of WS2
V. Voronenkov (IMEC, KULeuven), B. Groven, H. Medina (IMEC), I. Kandybka (IMEC, KULeuven), Y. Shi, D. Vranckx, B. De Vos, J. De Boeck, W. Huysecom, J. Meersschaut, S. Sergeant, T. Conard, S. Nijs, K. Deckers, T. Maurice, G. Verdickt (IMEC), E. Marques, G. Pourtois (IMEC, KULeuven), C. Huyghebaert, I. Asselberghs, M. Caymax, P. Morin (IMEC), and S. De Gendt (IMEC & KULeuven)