An Analysis on Different Single Diffusion Break Schemes for the Finfet

Monday, 10 October 2022: 15:30
Room 310 (The Hilton Atlanta)
W. Tu (Semiconductor Manufacturing International Corporation), J. Qiu, Y. Wang, Y. Wang (SMIC), and H. Zhang (Semiconductor Equipment Association of Japan)
The SDB (single diffusion breaks) is a typical design booster for the scaling of logic chips. Different SDB schemes are compared in the points of integration and structure effects on device performance. Analysis is conducted on the stress evolution of the ILD (inter layer dielectric) SDB and the MG (metal gate) SDB in depth. MG SDB is more preferred due to the less stress migration. Further comparisons are made between the SDB trench with STI (shallow trench isolation) remained and SDB trench with STI etching. The scheme with STI remained exhibits less structure effects.
See more of: D01 - Metallization and Integration
See more of: D01: Semiconductors, Dielectrics, and Metals for Nanoelectronics 19
See more of: Dielectric Science and Materials
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