Wide band gap (WBG) semiconductors have become of great interest in order to extend Moore’s Law beyond the limitations of current Si IC technology. WBG material, more specifically gallium nitride (GaN), is known to operate at greater switching speeds, temperatures, and frequencies leading to enhanced processing performance. However, as a result of its chemical properties, GaN is chemically inert impeding the ability to effectively planarize the surface at low chemical mechanical planarization (CMP) processing time and with minimized defectivity. It is widely reported that material removal on the Ga-face of the substrate is highly dependent on the oxidation of the surface to form Ga₂O₃. This work will focus on exploiting the surface oxidation mechanism of GaN in a low-shear force environment. By modulating the slurry composition (i.e., nanoparticle, oxidizer, redox-active additives), the factors that drive removal rate can be further understood in order to develop an optimized slurry-substrate environment that will promote greater material removal. To evaluate the reactions at the slurry-substrate interface and probe at the removal rate mechanism, a suite of dynamic analytical techniques (i.e., atomic force microscope, scanning electron microscope, profilometer, contact angle, zeta potential, and particle size) will be utilized.