G03 Poster Session

Monday, 10 October 2022: 18:00-20:00
Enormous Increases in Swir Detection for Gesn Strips Detector with Graphene Hybrid Structure
G. Lin (School of Science, Minzu University of China), Y. Zhao, K. Yu, J. Zheng (Institute of Semiconductors, Chinese Academy of Sciences), X. Zhang, S. Feng, and C. Li (School of Science, Minzu University of China)
Fabrication of Microbridges Based on Ge-on-SOI and Observation of Strong Resonant Light Emission
A. Odashima, T. Inoue, Y. Wagatsuma, R. Ikegaya, M. Nagao, and K. Sawano (Advanced Research Laboratories, Tokyo City University)
Evaluation of Crack Propagation in Strained Sige on Ge(111) Patterned with Various Etching Thickness
Y. Wagatsuma, R. Kanesawa, M. M. Alam, K. Okada (Advanced Research Laboratories, Tokyo City University), M. Yamada, K. Hamaya (Osaka University), and K. Sawano (Advanced Research Laboratories, Tokyo City University)
Fabrication of Strained Ge Microbridges with Mesh-Patterned Pads and Their Optical Properties
R. Ikegaya, T. Inoue, Y. Wagatsuma, K. Okada, and K. Sawano (Advanced Research Laboratories, Tokyo City University)
Fabrication of Thick Sige/Ge Multiple Quantum Wells on Patterned Ge-on-Si and Their Optical Properties
R. Kanesawa, Y. Wagatsuma, S. Kikuoka, Y. Sugiura, and K. Sawano (Advanced Research Laboratories, Tokyo City University)
Epitaxial Growth of SiGe on Ge Microbridge and Observation of Strong Resonant Light Emission
T. Inoue, W. Youya, R. Ikegaya, A. Odashima, M. Nagao, and K. Sawano (Advanced Research Laboratories, Tokyo City University)
Strong Room-Temperature EL Emissions from Strained Sige/Ge-on-Si (111) LEDs
S. Kikuoka, Y. Wagatsuma, Y. Sugiura, R. Kanesawa (Advanced Research Laboratories, Tokyo City University), M. Yamada, K. Hamaya (Osaka University), and K. Sawano (Advanced Research Laboratories, Tokyo City University)
Effect of H2 for Growing Germanium–Lead Alloys By Magnetron Sputtering Epitaxy
X. Liu, J. Zheng, Q. Huang, Z. Liu, Y. Zuo, and B. Cheng (Institute of Semiconductors, Chinese Academy of Sciences)
Nanosecond Laser Annealing of in-Situ Boron-Doped Ge Layersfor Dopant Activation
M. Frauenrath, P. Acosta Alba, M. Veillerot, A. M. Papon, and J. M. Hartmann (Université Grenoble Alpes, CEA, LETI)
Ge Nano-Heteroepitaxy: From Nano-Pillars to Thick Coalesced Layers
M. Mastari, M. Charles, P. Pimenta-Barros, M. Argoud, R. Tiron, A. M. Papon, N. Chevalier, J. M. Hartmann (Université Grenoble Alpes, CEA, LETI), D. Landru, Y. P. Kim, and O. Kononchuk (SOITEC)
See more of: G03: SiGe, Ge, and Related Materials: Materials, Processing, and Devices 10
See more of: Electronic Materials and Processing
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