Electronic Materials and Processing

Sunday, 9 October 2022

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08:10-10:10

G03: SiGe, Ge, and Related Materials: Materials, Processing, and Devices 10


G03 - Epitaxy of GeSn
Room 212
Chair(s): Gianlorenzo Masini and Jean-Michel Hartmann

10:30-12:10

G03: SiGe, Ge, and Related Materials: Materials, Processing, and Devices 10


G03 - GeSn Optoelectronics Device
Room 212
Chair(s): Gianlorenzo Masini and Andreas Mai

13:55-15:20

G02: Atomic Layer Deposition and Etching Applications 18


G02 - Tutorial
Room 211
Chair(s): Andrea Illiberi and Jeffrey W. Elam

14:00-16:00

G03: SiGe, Ge, and Related Materials: Materials, Processing, and Devices 10


G03 - Near IR Ge Photodetectors
Room 212
Chair(s): Andreas Mai and Gianlorenzo Masini

16:20-17:30

G03: SiGe, Ge, and Related Materials: Materials, Processing, and Devices 10


G03 - Mid-IR and Processing Integration for Photonics
Room 212
Chair(s): Gianlorenzo Masini and Andreas Mai

Monday, 10 October 2022

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08:15-12:00

G02: Atomic Layer Deposition and Etching Applications 18


G02 - Nanoelectronics 1
Room 211
Chair(s): Oscar van der Straten, Fred Roozeboom, Jolien Dendooven and Stefan De Gendt

08:30-10:00

G03: SiGe, Ge, and Related Materials: Materials, Processing, and Devices 10


G03 - Nanowires, Nanosheets and Nanoribbons
Room 212
Chair(s): Xiao Gong and Seiichi Miyazaki

10:20-12:00

G03: SiGe, Ge, and Related Materials: Materials, Processing, and Devices 10


G03 - Plenary
Room 212
Chair(s): Qizhi Liu and Xiao Gong

14:00-15:50

G03: SiGe, Ge, and Related Materials: Materials, Processing, and Devices 10


G03 - Emerging Materials and Devices
Room 212
Chair(s): Mikael Östling and Seiichi Miyazaki

14:00-16:00

G02: Atomic Layer Deposition and Etching Applications 18


G02 - Fundamentals of ALD
Room 211
Chair(s): Fred Roozeboom and Andrea Illiberi

18:00-20:00

G02: Atomic Layer Deposition and Etching Applications 18


G02 Poster Session

G03: SiGe, Ge, and Related Materials: Materials, Processing, and Devices 10


G03 Poster Session

Tuesday, 11 October 2022

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08:00-12:30

G01: The Long Reach of Electrochemistry – Semiconductors, Metallization, and Energy Storage: In Honor of D. Noel Buckley


G01 - Electrochemical Film Growth and Surface Modification
Room 210

08:10-10:10

G03: SiGe, Ge, and Related Materials: Materials, Processing, and Devices 10


G03 - Low Temperature Selective Epitaxy for Advanced CMOS Nodes
Room 212
Chair(s): Jean-Michel Hartmann and Xiao Gong

08:20-11:40

G02: Atomic Layer Deposition and Etching Applications 18


G02 - Nanoelectronics 2
Room 211
Chair(s): Jolien Dendooven and Stefan De Gendt

10:30-12:10

G03: SiGe, Ge, and Related Materials: Materials, Processing, and Devices 10


G03 - Stacked Nanosheet Devices
Room 212
Chair(s): Atsushi Ogura and Xiao Gong

14:00-15:40

G03: SiGe, Ge, and Related Materials: Materials, Processing, and Devices 10


G03 - Heterojunction Bipolar Transistors 1
Room 212
Chair(s): Vibhor Jain and Guofu Niu

14:00-17:20

G02: Atomic Layer Deposition and Etching Applications 18


G02 - ALD for Lithium Ion Batteries
Room 211
Chair(s): Matthias J. Young and Jeffrey W. Elam

14:30-15:30

G01: The Long Reach of Electrochemistry – Semiconductors, Metallization, and Energy Storage: In Honor of D. Noel Buckley


Europe Section Heinz Gerischer Award Address
Room 210

15:50-17:20

G01: The Long Reach of Electrochemistry – Semiconductors, Metallization, and Energy Storage: In Honor of D. Noel Buckley


G01 - Pores and Porosity
Room 210

16:00-17:40

G03: SiGe, Ge, and Related Materials: Materials, Processing, and Devices 10


G03 - Heterojunction Bipolar Transistors 2
Room 212
Chair(s): Vibhor Jain and Guofu Niu

Wednesday, 12 October 2022

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08:00-13:10

G01: The Long Reach of Electrochemistry – Semiconductors, Metallization, and Energy Storage: In Honor of D. Noel Buckley


G01 - Flow Batteries, Batteries, Energy Storage/conversion
Room 210

08:10-10:00

G03: SiGe, Ge, and Related Materials: Materials, Processing, and Devices 10


G03 - Quantum Computing
Room 212
Chair(s): Mikael Östling and Gianlorenzo Masini

08:20-10:00

G02: Atomic Layer Deposition and Etching Applications 18


G02 - Molecular and Hybrid Layer Processing 1
Room 211
Chair(s): Oana Leonte and Oscar van der Straten

10:20-12:00

G02: Atomic Layer Deposition and Etching Applications 18


G02 - ALD Present and Future
Room 211
Chair(s): Thorsten Lill and Ganesh Sundaram

10:20-12:20

G03: SiGe, Ge, and Related Materials: Materials, Processing, and Devices 10


G03 - Wide Bandgap Devices
Room 212
Chair(s): Wengang Bi and Xiao Gong

14:00-16:00

G02: Atomic Layer Deposition and Etching Applications 18


G02 - ALD for Catalysis
Room 211
Chair(s): Ganesh Sundaram and Oana Leonte

14:00-16:30

G01: The Long Reach of Electrochemistry – Semiconductors, Metallization, and Energy Storage: In Honor of D. Noel Buckley


G01 - Semiconductor Materials, Devices and Processing
Room 210

14:10-16:00

G03: SiGe, Ge, and Related Materials: Materials, Processing, and Devices 10


G03 - Epitaxy of Group - 4 Semiconductors
Room 212
Chair(s): Jean-Michel Hartmann and Andreas Mai

16:20-17:20

G03: SiGe, Ge, and Related Materials: Materials, Processing, and Devices 10


G03 - Strain Engineering in Group - 4 Semiconductors
Room 212
Chair(s): Atsushi Ogura and Andreas Mai

16:30-18:00

G01: The Long Reach of Electrochemistry – Semiconductors, Metallization, and Energy Storage: In Honor of D. Noel Buckley


G01 - Electrochemistry for Technology
Room 210

Thursday, 13 October 2022

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08:30-10:10

G03: SiGe, Ge, and Related Materials: Materials, Processing, and Devices 10


G03 - Metrology
Room 212
Chair(s): Andreas Schulze and Andreas Mai

09:00-10:40

G02: Atomic Layer Deposition and Etching Applications 18


G02 - Molecular and Hybrid Layer Processing 2
Room 211
Chair(s): Fred Roozeboom and Jolien Dendooven

10:30-11:50

G03: SiGe, Ge, and Related Materials: Materials, Processing, and Devices 10


G03 - Group - 4 Quantum Dots
Room 212
Chair(s): Seiichi Miyazaki and Andreas Mai

11:00-12:00

G02: Atomic Layer Deposition and Etching Applications 18


G02 - ALD for Membrane Applications
Room 211
Chair(s): Rong Chen and Jolien Dendooven

13:30-15:45

G03: SiGe, Ge, and Related Materials: Materials, Processing, and Devices 10


G03 - Structural and Optical Properties of Group - 4 Semiconductors
Room 212
Chair(s): Atsushi Ogura and Andreas Schulze