G03 - Wide Bandgap Devices

Wednesday, 12 October 2022: 10:20-12:20
Room 212 (The Hilton Atlanta)
Chairs:
Wengang Bi and Xiao Gong
10:20
Substrate Effects in GaN-on-Si Hemt Technology for RF FEM Applications
S. Yadav (imec), P. Cardinael (Universite Catholique de Louvain, imec), M. Zhao, K. Vondkar, U. Peralagu, A. Alian, R. Rodriguez, A. Khaled (IMEC, Kapeldreef 75, B-3001 Leuven, Belgium), S. Makovejev, E. Ekoga (incize), D. Lederer, J. P. Raskin (Universite Catholique de Louvain), B. Parvais (IMEC, Kapeldreef 75, B-3001 Leuven, Belgium, VUB Brussels, Belgium), and N. Collaert (IMEC, Kapeldreef 75, B-3001 Leuven, Belgium)
10:50
MOCVD Growth of Ga2O3, Algao and Heterostructures
H. Zhao (Ohio State University), A. F. M. A. U. Bhuiyan, Z. Feng, and L. Meng (The Ohio State University)
11:20
High-Permittivity Dielectric for High-Performance Wide Bandgap Electronic Devices
M. W. Rahman, C. Joishi, N. K. Kalarickal, H. Lee (The Ohio State University), and S. Rajan (Ohio State University)
11:50
Integrating Diamond for Cooling Electronics
S. Chowdhury (Stanford University)
See more of: G03: SiGe, Ge, and Related Materials: Materials, Processing, and Devices 10
See more of: Electronic Materials and Processing
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