J. LeBeau (Massachusets Institute of Technology)

A. Joshi (Active Layer Parametrics (ALP), Scotts Valley, California, USA), T. Tabata, F. Roze (Laser Systems & Solutions of Europe (LASSE)), and B. M. Basol (Active Layer Parametrics (ALP), Scotts Valley, California, USA)

C. Richter (Leibniz-Institut für Kristallzüchtung), C. Corley-Wiciak (IHP - Leibniz-Institut für innovative Mikroelektronik), M. H. Zöllner (IHP-Leibniz-Institut für innovative Mikroelektronik), Y. Yamamoto (IHP), K. Anand (IHP - Leibniz-Institut für innovative Mikroelektronik), G. Capellini (IHP – Leibniz-Institut für innovative Mikroelektronik), L. Schreiber (JARA-FIT Institute for Quantum Information, FZJ GmbH, RWTH Aachen University), W. Langheinrich (Infineon Technologies Dresden GmbH&Co.KG), E. Zatterin (The European Synchrotron Radiation Facility (ESRF),), T. Schulli (European Synchrotron Radiation Facility), M. Virgilio (Università di Pisa, Italy), C. L. Manganelli, and F. Reichmann (IHP - Leibniz-Institut für innovative Mikroelektronik)

P. Ercius (Lawrence Berkeley National Laboratory), J. Zhou (Peking University), Y. Yang (KAIST), Y. Yang, D. Kim, Y. Yuan, X. Tian (University of California Los Angeles), C. Ophus (Lawrence Berkeley National Laboratory), F. Sun (University of Buffalo), A. Schmid (Lawrence Berkeley National Laboratory), and J. Miao (University of California Los Angeles)