G03 - Heterojunction Bipolar Transistors 1

Tuesday, 11 October 2022: 14:00-15:40
Room 212 (The Hilton Atlanta)
Chairs:
Vibhor Jain and Guofu Niu
14:00
Challenges for Sige Bicmos in Advanced-Node SOI
J. Pekarik, V. Jain, C. Kenney, J. Holt, S. Khokale, S. Saroop, J. Johnson, K. Stein, V. Ontalus, C. Durcan, M. Nafari, T. Nesheiwat, S. Saudari, E. Yarmoghaddam, S. Chaurasia, and A. Joseph (GlobalFoundries)
14:30
Overview of Aging Mechanisms in Sige Hbts
U. Raghunathan, D. Ioannou, V. Jain, and J. Pekarik (GlobalFoundries)
14:50
Investigation of Arsenic Transient Enhanced Diffusion from 550 °C Si:As RP-CVD Epitaxy with Disilane Precursor
F. Deprat, J. Vives, M. Juhel, A. Valery, J. Lespiaux, A. Baron, E. Brezza, and A. Gauthier (STMicroelectronics)
15:10
Silicon-Germanium Electronics and Photonics for Space Systems
J. D. Cressler (Georgia Institute of Technology)