G03 - Epitaxy of Group - 4 Semiconductors

Wednesday, 12 October 2022: 14:10-16:00
Room 212 (The Hilton Atlanta)
Chairs:
Jean-Michel Hartmann and Andreas Mai
14:10
Strain Engineering of Heteroepitaxial SiGe/Ge on Si with Various Crystal Orientations
K. Sawano (Advanced Research Laboratories, Tokyo City University)
14:40
High Quality Ge Growth on Si(111) and Si(110) By Using Reduced Pressure Chemical Vapor Deposition
Y. Yamamoto, W. C. Wen, M. A. Schubert, C. Corley-Wiciak (IHP - Leibniz-Institut für innovative Mikroelektronik), and B. Tillack (IHP - Leibniz-Institut für innovative Mikroelektronik, Technische Universität Berlin)
15:00
Reduced Pressure – Chemical Vapor Deposition of Blanket Monocrystalline and Polycrystalline Si(:B) and Sige(:B) Layers
J. Lespiaux, F. Deprat, J. Vives, R. Duru, M. Bicer, A. Gauthier, E. Brezza, M. Juhel, F. Chenevas-Paule (STMicroelectronics), and J. M. Hartmann (Univ. Grenoble Alpes, CEA, LETI)
15:20
Substitutional Carbon Incorporation in Sigec/Si Heterostructures: Influence of Silicon Precursors
J. Vives, F. Deprat, D. Dutartre, J. Lespiaux, R. Duru, M. Bicer, M. Juhel (STMicroelectronics), and D. Chaussende (Univ. Grenoble Alpes, CNRS, Grenoble INP, SIMaP)
15:40
Low Temperature Epitaxy of Ga in Situ doped Si1-XGex: Dopant Incorporation, Structural and Electrical Properties
G. Rengo (KU Leuven, imec), C. Porret, A. Y. Hikavyy (imec), G. Coenen (KU Leuven), M. Ayyad, R. J. H. Morris (imec), S. Pollastri, D. O. De Souza (Elettra-Sincrotrone Trieste), D. Grandjean (KU Leuven), R. Loo (imec), and A. Vantomme (KU Leuven)
See more of: G03: SiGe, Ge, and Related Materials: Materials, Processing, and Devices 10
See more of: Electronic Materials and Processing
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