G03 - Near IR Ge Photodetectors

Sunday, 9 October 2022: 14:00-16:00
Room 212 (The Hilton Atlanta)
Chairs:
Andreas Mai and Gianlorenzo Masini
14:00
Versatile Germanium Photodiodes with 3dB Bandwidths from 110GHz to 265GHz
A. Peczek, S. Lischke, D. Steckler (IHP – Leibniz-Institut für innovative Mikroelektronik), J. Morgan, A. Beling (University of Virginia), and L. Zimmermann (Technische Universität Berlin, IHP – Leibniz-Institut für innovative Mikroelektronik)
14:30
Electrically Tunable Ge/Si VIS-Swir Photodetector
A. Ballabio (Politecnico di Milano), A. De Iacovo (Univerisite di Roma Tre), J. Frigerio (Politecnico di Milano), A. Fabbri (Istituto Nazionale Fisica Nucleare – INFN), G. Isella (Politecnico di Milano), and L. Colace (Università di Roma Tre)
14:50
Ge Microcrystals Photedetectors with Enhanced Infrared Responsivity
G. Isella, V. Falcone, A. Ballabio, A. Barzaghi, C. Zucchetti, L. Anzi, J. Frigerio, R. Sordan, and P. Biagioni (Politecnico di Milano)
15:10
A Near-Infrared Pin Photodetector of Strain-Enhanced Ge Layer Epitaxially Grown on a Bonded Si-on-Quartz Wafer
M. Kuzutani, S. Furuya, J. A. Piedra Lorenzana, T. Hizawa, and Y. Ishikawa (Toyohashi University of Technology)
15:30
Integration Aspects of Plasmonic TiN-Based Nano-Hole-Arrays on Ge Photodetectors in a 200mm Wafer CMOS Compatible Silicon Technology
C. Mai, S. Marschmeyer, A. Peczek, A. Kroh, J. Jose (IHP - Leibniz-Institut für innovative Mikroelektronik), S. Reiter, I. Fischer (BTU Cottbus-Senftenberg), C. Wenger (BTU Cottbus-Senftenberg, IHP - Leibniz-Institut für innovative Mikroelektronik), and A. Mai (IHP - Leibniz-Institut für innovative Mikroelektronik)