G02 - Nanoelectronics 2

Tuesday, 11 October 2022: 08:20-11:40
Room 211 (The Hilton Atlanta)
Chairs:
Jolien Dendooven and Stefan De Gendt
08:20
(Invited) Nm-Scale Patterns and Selectivity: A Blessing or a Curse
J. W. Clerix and A. Delabie (University of Leuven, imec)
09:00
Targeted Dehydration As a Route to Site-Selective Atomic Layer Deposition at TiO2 Defects
J. C. Jones, E. Kamphaus, J. R. Guest, L. Cheng, and A. B. F. Martinson (Argonne National Laboratory)
09:20
(Invited) Area-Selective Spatial Atomic Layer Deposition of Silicon-Based Materials
A. Mameli (TNO-Holst Centre), B. Karasulu (University of Warwick), J. Shen (TNO-Holst Centre), and F. Roozeboom (University of Twente)
10:00
Break
10:20
Direct Patterning of ZnO Deposition By Atomic-Layer Additive Manufacturing Using a Safe and Economical Precursor
M. K. S. Barr (Friedrich-Alexander Universität Erlangen-Nürnberg-CTFM), S. Stefanovic, N. Gheshlaghi (Friedrich-Alexander Universität Erlangen-Nürnberg, Germany), D. Zanders, A. Devi (Ruhr-Universität Bochum/Carleton University), and J. Bachmann (Friedrich-Alexander Universität Erlangen-Nürnberg, Germany)
10:40
In-Situ Resistance Optimization for ALD Nanocomposite Resistive Materials
A. U. Mane (Argonne National Laboratory) and J. W. Elam (Applied Materials Division, Argonne National Laboratory)
11:00
(Invited) Advances in Atomic Layer Processing of Hafnia-Zirconia Ferroelectrics
P. D. Lomenzo, R. Alcala, M. Materano, C. Richter, T. Mikolajick, and U. Schroeder (Namlab gGmbH)