Atomic layer deposition (ALD) made resistive nanocomposite materials can be used in many emerging applications such as charge draining layers for electron optic and MEMS devices, functional resistive layers in electron/ion amplifying microchannel plates (MCPs) which are used in photodetectors and mass spectrometry, HF resistance with tunable electrical conductivity coatings for stabilizing Li-ion battery cathode materials, selective solar absorbing coatings for concentrated solar power (CSP), and barrier and encapsulation coatings. Over the last decade, we have worked broadly on the research and development of resistive nanocomposite coatings. In this context, we have developed many nanocomposite materials with tunable resistance based on mixing conducting ALD metal and insulating ALD metal oxide or metal fluoride processes. These ALD nanocomposite materials show robust material performance in many of the applications listed above. Here we are particularly targeting a functional resistive coating that now commercially used for manufacturing large area ALD-MCPs. For this, there are two key topics that we are addressing a) Minimum thickness requirement for resistive coating which provides a stable targeted resistance behavior for MCPs, and b) Can we tune the temperature coefficient of resistance (TCR) of the ALD nanocomposite materials so that the ALD MCPs can operate over a wide temperature range without affecting their performance. To address these two topics, we have utilized in-situ resistance monitoring during the ALD nanocomposite process. With this method we have optimized resistive nanocomposite material ALD processes e.g. (M:Al₂O₃ where M= W and Mo) for MCPs and also targeted the desired TCR of the materials and achieved ultra-low TCR values. We believe these optimized coatings will reduce the ALD-MCP processing time substantially and enable ALD-MCPs and photodetectors to operate over a broader temperature range compared to existing ALD-MCPs.