G03 - Low Temperature Selective Epitaxy for Advanced CMOS Nodes

Tuesday, 11 October 2022: 08:10-10:10
Room 212 (The Hilton Atlanta)
Chairs:
Jean-Michel Hartmann and Xiao Gong
08:10
Low Temperature Selective Epitaxy of Group-IV Semiconductors for Nanoelectronics
R. Khazaka, B. Marozas, W. Kim, and M. Givens (ASM, Belgium)
08:40
Properties of Selectively Grown Si:P Layers below 500°C for Use in Stacked Nanosheet Devices
E. Rosseel, C. Porret, A. Y. Hikavyy, R. Loo, O. Richard, H. Mertens, E. Dentoni Litta, and N. Horiguchi (imec)
09:00
Low Temperature Cyclic Deposition/Etch (CDE) of Tensile-Strained Si:P
J. M. Hartmann, J. Kanyandekwe, and M. Veillerot (Université Grenoble Alpes, CEA, LETI)
09:20
Very Low Temperature Tensile and Selective Si:P Epitaxy for Advanced CMOS Devices
J. Kanyandekwe (Université Grenoble Alpes, CEA, LETI), M. Bauer (Applied Materials USA), T. Marion, L. Saidi (Université Grenoble Alpes, CEA, LETI), J. B. Pin, J. Bisserier (Applied Materials France), J. Richy, N. Gauthier, P. Dezest, L. Brunet, V. Lapras, T. Dewolf (Université Grenoble Alpes, CEA, LETI), S. Thomas (Applied Materials USA), and J. M. Hartmann (Université Grenoble Alpes, CEA, LETI)
09:40
A Renewed Focus on Surface Chemistry for Advanced Logic-Node Epitaxial Growth Processes
J. Margetis and J. Tolle (Applied Materials)
See more of: G03: SiGe, Ge, and Related Materials: Materials, Processing, and Devices 10
See more of: Electronic Materials and Processing
<< Previous Session | Next Session >>