G02 - Nanoelectronics 1

Monday, 10 October 2022: 08:15-12:00
Room 211 (The Hilton Atlanta)
Chairs:
Oscar van der Straten , Fred Roozeboom , Jolien Dendooven and Stefan De Gendt
08:15
Welcoming Remarks
08:20
(Invited) ALE Based Manufacturing of Nanostructures below 20 Nm
D. B. Suyatin, R. Jafari Jam, M. Karimi (AlixLabs), S. A. Khan (Danish National Metrology Institute), and J. Sundqvist (AlixLabs)
09:00
Electrical and Optical Properties of P-Type NiO Films Grown Via Nickelocene Precursor in a Hollow-Cathode Plasma-ALD Reactor
S. Ilhom, A. Mohammad, P. Chardavoyne, S. Abdari, D. Zacharzewski, M. Niemiec, and N. Biyikli (University of Connecticut)
09:20
(Invited) Ligand Addition for Thermal Atomic Layer Etching of Metals
J. A. Murdzek and S. M. George (University of Colorado Boulder)
10:00
Break
10:20
Robust YF3 Batch ALD Process with a Novel Precursor for Plasma Etch Tool Component Protection
J. Kalliomäki (University of Helsinki, Picosun Group), I. Manninen, E. Manninen, P. King, and R. Ritasalo (Picosun Group)
10:40
Chemistry and Surface Reaction Mechanism of the Plasma-Enhanced Atomic Layer Deposition of Ruthenium and Cobalt for the Next Generation Interconnect
J. Liu (Tyndall National Institute, University College Cork) and M. Nolan (University College Cork)
11:00
Atomic Layer Deposition for Memory Applications
A. Illiberi (ASM Belgium), M. Givens (ASM, Belgium), A. Leonhardt, M. Surman, R. Ramachandran (ASM), and M. Popovici (Katholieke Universiteit Leuven)
11:20
(Invited) Atomically-Precise Surface Processes: From Molecular Mechanisms to Realistic Devices
A. Teplyakov (University of Delaware)
See more of: G02: Atomic Layer Deposition and Etching Applications 18
See more of: Electronic Materials and Processing
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