The semiconductor industry has continuously adopted more complex architectures and 3D geometries, while simultaneously down scaling the critical dimensions of the devices. This presentation will briefly review the evolution of the memory device architectures, their impact on material/processing requirements, and outline how atomic scale processing has helped to overcome integration challenges. We will first present some key atomic scale processes which have enabled the fabrication of 3D memory devices, with particular focus on V-NAND and DRAM. Next, we will introduce new atomic scale processes, their implementation in emerging memory concepts and the related challenges on the path to productization. We will present the recent advances in ALD of ferroelectric materials, showing how a precise control of film composition, dopant incorporation and morphology are key to control ferroelectricity in doped HfZrO.