G03 - Strain Engineering in Group - 4 Semiconductors

Wednesday, 12 October 2022: 16:20-17:20
Room 212 (The Hilton Atlanta)
Chairs:
Atsushi Ogura and Andreas Mai
16:20
Stress Relaxation in Sgoi Structure Obtained by Condensation
A. F. Mallet, O. Gourhant, C. Duluard (STMicroelectronics), I. Berbezier, and L. Favre (Institute Materials Microelectronics Nanosciences of Provence)
16:40
Lateral-Selective Sige Growth for Dislocation-Free Virtual Substrate Fabrication
K. Anand, M. A. Schubert, D. Spirito, A. A. Corley-Wiciak, C. Corley-Wiciak, W. M. Klesse (IHP - Leibniz-Institut für innovative Mikroelektronik), A. Mai (IHP - Leibniz-Institut für innovative Mikroelektronik, Technische Hochschule Wildau), B. Tillack (IHP - Leibniz-Institut für innovative Mikroelektronik, Technische Universität Berlin), and Y. Yamamoto (IHP - Leibniz-Institut für innovative Mikroelektronik)
17:00
Stress Engineering in Germanium-Silicon Heterostructure Using Surface Activated Hot Bonding
Q. Lomonaco, K. Abadie, C. Morales (Univ. Grenoble Alpes, CEA, LETI), L. G. Michaud (EV Group), J. Richy (Université Grenoble Alpes, CEA, LETI), S. Moreau (Univ. Grenoble Alpes, CEA, LETI, 38000 Grenoble, France.), J. P. Colonna (Univ. Grenoble Alpes, CEA, LETI), and F. Fournel (CEA Grenoble)